may 2009 1 mitsubishi high voltage diode module RM1800HE-34S high power switching use insulated type i f ................................................................ 1800a v rrm ...................................................... 1700v insulated type 1-element in a pack aisic baseplate application tr action drives, high reliability converters / inverters, dc choppers RM1800HE-34S outline drawing & circuit diagram dimensions in mm high voltage diode module high voltage diode module circuit diagram k k a a label k a k a 4- 6.5 mounting holes 4-m8 nuts +1.0 0 38 (15) 114 0.3 130 1.0 20.5 61.5 0.5 7 (15) 20 40 0.5 7 (15) 74 0.3 90 1.0 3 9.3 39.5 125.5 29.7 85.5 24 >pps<
may 2009 2 mitsubishi high voltage diode module RM1800HE-34S high power switching use insulated type maximum ratings symbol item conditions unit ratings high voltage diode module high voltage diode module repetitive peak reverse voltage non-repetitive peak reverse voltage reverse dc voltage dc forward current (note 1) surge forward current current-squared, time integration isolation voltage junction temperature operating temperature storage temperature t j = 25 c t j = 25 c t j = 25 c t c = 25 c t j = 25 c start, t w = 8.3 ms half sign wave t j = 25 c start, t w = 8.3 ms half sign wave charged part to the baseplate rms sinusoidal, 60hz 1min. 1700 1700 1 150 1800 9600 384 6000 ?0 ~ +150 ?0 ~ +125 ?0 ~ +125 v v v a a ka 2 s v c c c v rrm v rsm v r(dc) i f i fsm i 2 t v iso t j t op t stg note 1. continuous dc current should be limited to equal to or less than 1200a due to current capacity of internal electrodes. typ max electrical characteristics symbol item conditions limits ma v s a c j/p v rm = v rrm i f = 1800 a tj = 25 c tj = 125 c tj = 25 c tj = 125 c repetitive reverse current forward voltage (note 2) reverse recovery time reverse recovery current reverse recovery charge reverse recovery energy (note 3) 5 30 1.8 2.90 2.40 0.80 850 600 0.40 i rrm v fm t rr i rr q rr e rec v r = 750 v, i f = 1800 a di/dt = ?000 a/ s l s =100nh, t j = 125 c min unit note 2. it doesn't include the voltage drop by internal lead resistance. 3. e rec is the integral of 0.1v r x 0.1i rr x dt.
may 2009 3 mitsubishi high voltage diode module RM1800HE-34S high power switching use insulated type high voltage diode module high voltage diode module min typ max thermal characteristics symbol item conditions limits unit r th(j-c) r th(c-f) junction to case case to fin, grease = 1w/m? d (c-f) =100 m k/kw k/kw thermal resistance contact thermal resistance 22.0 17.0 min typ max mechanical characteristics symbol item conditions limits unit m t m s m m8: main terminals screw m6: mounting screw n? n? kg mounting torque mass 13.0 6.0 0.66 6.67 2.84 performance curves reverse recovery energy characteristics (typical) forward characteristics (typical) forward voltage v f (v) forward current i f (a) t j = 25 c t j = 125 c 0 3000 2500 2000 1000 1500 500 0 0.8 0.6 0.4 0.2 0245 13 0 1000 2000 3000 4000 forward current i f (a) reverse recovery energy e rec (j/p) v r = 750v, t j = 125 c l s = 100nh
may 2009 4 mitsubishi high voltage diode module RM1800HE-34S high power switching use insulated type high voltage diode module high voltage diode module forward current i f (a) reverse recovery characteristics (typical) 10 3 10 4 10 2 10 1 10 1 10 2 10 0 10 -1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 reverse recovery time t rr ( s) reverse recovery current i rr (a) reverse recovery current i rr (a) 10 3 10 2 23 57 10 4 23 5 447 transient thermal impedance characteristics normalized transient thermal impedance time (s) 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -3 10 2 10 1 10 0 10 -1 10 -2 23 57 23 57 23 57 23 57 23 57 reverse recovery safe operating area (rrsoa) reverse voltage v r (v) 0 1000 2000 3000 4000 0 500 1500 1000 2000 v r 1150v, di/dt 4600a/ s t j = 125 c v r = 750v, t j = 125 c l s = 100nh i rr t rr r th(j?) = 22k/kw
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